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| Ordering number : ENN7705 2SK3705 N-Channl Silicon MOSFET 2SK3705 Features * * * * * General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID* IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 60 20 60 208 2.0 35 150 --55 to +150 540 60 Unit V V A A W W C C mJ A *Shows Chip Capability *1 VDD=20V, IAV=60A, L=200H *2 L200H, single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=26A ID=26A, VGS=10V ID=26A, VGS=4V Ratings min 60 1 10 1.2 28 40 9.0 12 12.5 17 2.6 typ max Unit V A A V S m m Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13004QA TS IM TA-100957 No.7705-1/4 2SK3705 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=52A VDS=30V, VGS=10V, ID=52A VDS=30V, VGS=10V, ID=52A IS=52A, VGS=0 Ratings min typ 5500 750 550 38 215 380 280 100 18 16 1.0 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Marking : K3705 Package Dimensions unit : mm 2063A 10.0 3.2 3.5 7.2 Switching Time Test Circuit 4.5 2.8 VIN 10V 0V VIN VDD=30V 16.0 ID=26A RL=1.15 18.1 D PW=10s D.C.1% VOUT 5.6 14.0 1.6 1.2 0.75 2.4 0.7 P.G G 2SK3705 50 S 2.55 123 2.55 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML 2.55 2.55 Unclamped Inductive Test Circuit 50 RG L DUT 15V 0V 50 VDD 100 90 80 ID -- VDS Tc=25C 8 10 VV 6V 100 90 80 ID -- VGS 25 Tc= -25C C 1.0 1.5 VDS=10V Drain Current, ID -- A 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain Current, ID -- A 70 60 50 40 30 20 10 0 0 0.5 25 C 2.0 2.5 Tc = 75 C --25 C VGS=3V 3.0 3.5 75C 4.0 4.5 IT06726 4V Drain-to-Source Voltage, VDS -- V IT06725 Gate-to-Source Voltage, VGS -- V No.7705-2/4 2SK3705 30 RDS(on) -- VGS ID=26A 25 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m 25 Static Drain-to-Source On-State Resistance, RDS(on) -- m 20 20 15 15 Tc= 75C 10 10 =4V VGS 6A, 2 10V I D= S= A, VG 26 I D= 25C --25C 5 5 0 0 1 2 3 4 5 6 7 8 9 10 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID IT06727 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.2 Case Temperature, Tc -- C IT06728 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS=10V Tc=7 5 25C C 0.4 0.6 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 5 7 100 IT06729 10000 7 --25C 0.8 1.0 C 25 C 5 --2 = C Tc 75 Forward Drain Current, IF -- A 1.2 1.4 IT06730 SW Time -- ID td(off) tf Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=30V VGS=10V Ciss Switching Time, SW Time -- ns 5 3 2 5 Ciss, Coss, Crss -- pF 3 2 100 7 5 3 2 10 0.1 1000 7 5 3 2 tr Coss Crss td(on) 100 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT06731 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0 5 10 15 20 25 30 IT06732 Drain Current, ID -- A 10 9 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS=30V ID=52A IDP=208A <10s 10 8 ID=60A 10 1m s 0 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 Drain Current, ID -- A s DC Operation in this area is limited by RDS(on). 10 op era 10 m 0m s s n s tio 0.1 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC IT06733 Drain-to-Source Voltage, VDS -- V 5 7 100 IT06734 No.7705-3/4 2SK3705 2.5 PD -- Ta Allowable Power Dissipation, PD -- W 40 35 30 25 20 15 10 5 0 PD -- Tc Allowable Power Dissipation, PD -- W 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT06735 Case Temperature, Tc -- C IT06736 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2004. Specifications and information herein are subject to change without notice. PS No.7705-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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